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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2002.01.07 Page No. : 1/4
HLB124E
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB124E is designed for high voltage, high speed switching inductive circuits, and amplifier applications.
Features
* High Speed Switching * Low Saturation Voltage * High Reliability
TO-220
Absolute Maximum Ratings (Ta=25C)
* Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 C Junction Temperature ................................................................................................................ +150 C * Maximum Power Dissipation Total Power Dissipation (Tc=25C)................................................................................................. 35 W * Maximum Voltages and Currents (Ta=25C) BVCBO Collector to Base Voltage ................................................................................................. 600 V BVCEO Collector to Emitter Voltage .............................................................................................. 400 V BVEBO Emitter to Base Voltage ....................................................................................................... 8 V IC Collector Current (DC)................................................................................................................... 2 A IC Collector Current (Pulse)............................................................................................................... 4 A IB Base Current (DC)..........................................................................................................................1 A IB Base Current (Pulse) ..................................................................................................................... 2 A
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 fT Min. 600 400 8 10 10 6 15 Typ. Max. 10 10 0.3 0.8 0.9 1.2 40 Unit V V V uA uA V V V V Test Conditions IC=1mA IC=10mA IE=1mA VCB=600V VEB=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.1A, IB=10mA IC=0.3A, IB=30mA VCE=5V, IC=0.3A VCE=5V, IC=0.5A VCE=5V, IC=1A VCE=10V, IC=0.3, f=1MHz
*Pulse Test : Pulse Width 380us, Duty Cycle2%
MHz
Classification of hFE1
Rank Range
HLB124E
B1 10~17
B2 13~22
B3 18~27
B4 23~32
B5 28~37
B6 33~40
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100 100000
Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2002.01.07 Page No. : 2/4
Saturation Voltage & Collector Current
125 C
o
75 C
o
25 C
o
Saturation Voltage (mV)
10000
o
75 C 1000
hFE
10
125 C 100
o
25 C
o
hFE @ VCE=5V 1 1 10 100 1000 10000 10 1 10 100
VCE(sat) @ IC=10IB
1000
10000
Collector Current IC (mA)
Collector Current IC (mA)
Saturation Voltage & Collector Current
10000
On Voltage & Collector Current
1000
VCE=5V
Saturation Voltage (mV)
75 C 1000 25 C
o
o
125 C VBE(sat) @ IC=10IB 100 1 10 100 1000 10000
o
On Voltage (mV)
100 1 10 100 1000 10000
Collector Current IC (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
Switching Time & Collector Current
10 VCC=100V, IC=5IB1=5IB2
Switching Time (us)
Capacitance (Pf)
Cob 10
Ton 1 Tstg
Tf
1 1 10 100
0.1 0.1 1 10
Reverse Biased Voltage (V)
Collector Current (A)
HLB124E
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2002.01.07 Page No. : 3/4
Safe Operating Area
10000
Collector Current (mA)
1000
PT=1 ms 100 PT=100 ms PT=1 s
10
1 1 10 100 1000
Forward Voltage (V)
HLB124E
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A D B E C
HSMC Logo Part Number Date Code
Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2002.01.07 Page No. : 4/4
Product Series Rank
H I G 4 P M 3 2 1 N K
Style: Pin 1.Base 2.Collector 3.Emitter
O
3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical
DIM A B C D E G H
Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398
Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25
DIM I K M N O P
Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248
Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB124E
HSMC Product Specification

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